I. Product Overview

The new-generation ultra-high resolution Field Emission Scanning Electron Microscope (FE-SEM) is a precision electron microscopy imaging instrument developed to meet the demands of cutting-edge scientific research and high-end industrial inspection. Equipped with a high-brightness Schottky / cold field emission electron gun, a highly stable electron optical system and advanced signal detection & control algorithms, the system delivers all-round improvements in ultra-high resolution, low accelerating voltage imaging performance, sample compatibility and system stability. Suitable for nanomaterials, semiconductor devices, life sciences and advanced manufacturing, this instrument serves as a reliable tool for micro-nano structure characterization.

Basic Parameter Configuration

• SE Resolution: 0.9 nm @ 15 kV, 1.2 nm @ 1 kV

• Fitted with electrostatic-electromagnetic compound objective lens with zero stray magnetic field, enabling ultra-high resolution imaging and analysis of magnetic samples.

• Adopts new-generation in-column electron acceleration and deceleration technology to guarantee low-voltage high-resolution measurement of complex samples.

• Equipped with 4 latest-generation detectors supporting 9 imaging modes for more comprehensive acquisition of sample information.

• Over 20 expansion ports allow installation of various analytical accessories, featuring exclusive integrated Raman spectroscopy integration.

• Platinum particles on silicon substrate.

• Fractured ceramic surface, imaged at 2 keV.

• Fungal spores observed under Cryo conditions.

• CL image of quartz crystal acquired with TESCAN CL detector.

II. Functional Features

1. Ultra-high resolution imaging: Sub-nanometer resolution is achievable under both high and low accelerating voltages.

2. High-contrast imaging at low voltage: Ideal for in-situ observation of non-conductive, soft and biological samples.

3. Simultaneous multi-signal acquisition: Supports multi-channel imaging including Secondary Electron (SE) and Backscattered Electron (BSE).

4. Intelligent operation platform: Integrated with auto-focus, automatic astigmatism correction and parameter optimization functions.

5. Highly stable vacuum system: Multi-stage vacuum design ensures long-term stable operation of the electron beam.

6. Wide sample compatibility: Compatible with samples of various sizes, equipped with tiltable and rotatable stages.

III. Application Scenarios & Fields

• Research on nanomaterials and 2D materials: Morphology, particle size and defect analysis.

• Semiconductors and integrated circuits: Device failure analysis, line width measurement and process evaluation.

• Life sciences: Observation of cell surfaces and tissue ultrastructures (sample pre-treatment required).

• New energy and energy storage materials: Morphology and interface analysis of electrode materials.

• Advanced manufacturing and failure analysis: Research on microstructure fracture, fatigue and corrosion.

IV. Technical Advantages

1. High-brightness field emission electron source: Greatly improves signal-to-noise ratio and spatial resolution.

2. Low-aberration electron optical design: Delivers stable imaging across a wide voltage range.

3. Advanced detection system: Enhances image contrast for both low-Z and high-Z materials.

4. Optimized vibration damping and anti-interference structure: Suitable for standard laboratory environments.

5. Modular system architecture: Facilitates functional expansion and future upgrades.

6. Capability of long-hour stable operation: Meets high-intensity demands for scientific research and industrial inspection.

V. Typical Models & Application Cases

Working Principle Diagram

Data chart

Appearance drawing