I. Product Overview

Electron Beam Lithography (EBL) is a micro-nano fabrication device that realizes direct pattern writing by utilizing the interaction between high-energy electron beams and electron beam resists. The system generates high-energy electron beams via an electron gun. After focusing, astigmatism correction and high-speed scanning control, it performs nano-scale exposure on the surface of photoresist. Breaking the diffraction limit of conventional lithography, this technology achieves a resolution below 10 nm. It is widely applied in microelectronics, quantum devices, 2D material devices and research on novel nanostructures.

II. Features

1. Ultra-high resolution direct writing: Minimum line width down to 10 nm scale.

2. Maskless direct writing: No photomask required, greatly reducing R&D costs.

3. High-precision electron optical system: Equipped with electron gun, focusing lenses and scanning deflection system.

4. Compatibility with various resists: Supports E-beam resists including PMMA, HSQ and ZEP.

5. High-stability platform: Adopts active vibration isolation and temperature drift control to guarantee exposure accuracy.

6. Intelligent control software: Enables pattern import, dose correction and automatic alignment.

7. Vacuum interlock and safety protection: Ensures long-term stable operation of the system.

III. Application Fields & Scenarios

1. Semiconductors and integrated circuits: Prototyping and structural verification of advanced-node devices.

2. 2D materials and nano-devices: Electrodes and nanopatterning for graphene, TMDs and related devices.

3. Quantum devices: Fabrication of quantum dots, Josephson junctions and superconducting structures.

4. Nanophotonics: Metasurfaces, nanoantennas and photonic crystals.

5. Research and education: Micro-nano fabrication experimental platforms for universities and research institutes.

IV. Technical Advantages

1. Superior resolution over conventional lithographyUsing high-energy electron beams as the exposure source, the EBL system breaks the optical diffraction limit and enables fine patterning at sub-micron and nanometer scales. Compared with traditional UV and DUV lithography, it shows distinct strengths in fabricating ultra-fine lines, high-density structures and complex nanopatterns, fully meeting the demands of advanced micro-nano fabrication and cutting-edge scientific research.

2. Flexible patterning for rapid modification and iterationAdopting digital direct writing without physical photomasks, patterns can be imported and edited directly via software, greatly shortening the cycle of design, verification and optimization. It is ideal for R&D scenarios requiring frequent structural adjustments and fast parameter iteration, effectively cutting R&D costs and improving experimental efficiency.

3. High exposure accuracy and excellent repeatabilityThe highly stable electron optical system, together with precise deflection and alignment control, ensures accurate regulation of exposure position, line width and dosage. Featuring outstanding long-term stability and process consistency, the system delivers highly uniform patterning across repeated exposures, suitable for manufacturing micro-nano devices with strict requirements on structural uniformity.

4. Seamless integration with evaporation, sputtering and other processesPatterns defined by electron beam lithography can be directly applied to subsequent processes such as metal evaporation, magnetron sputtering and etching, facilitating the establishment of a complete device fabrication workflow. The system can be flexibly integrated into existing cleanrooms and micro-nano fabrication platforms to boost overall process collaboration efficiency.

5. Ideal for R&D of small-batch and high-value-added micro-nano structuresWith maskless operation, flexible processes and high precision, the system is well-suited for exploratory research on new materials, novel devices and innovative structures conducted by research institutes, university laboratories and high-tech enterprises. It presents remarkable technical and cost advantages for small-batch, multi-variety and high-precision micro-nano patterning tasks.

V. Typical Models & Application Cases

Unique Advantages of ABN EBL

• Fully integrated into SEM software with excellent compatibility and easy operation.

• Leverages the wide-field view of SEM to achieve a single writing field up to the millimeter scale.

• Equipped with a powerful 50 MHz internal pattern generator, delivering a minimum dwell time of 20 ns for ultra-fast exposure.

• Adopts 2 × 16-bit digital converters for electron beam deflection in X and Y directions.

• The software features a concise and intuitive interface, which is user-friendly and easy to operate.

• Supports import of DXF and GDSII files as well as multi-layer project management.

• Allows variable dwell time between different pixels.

Equipment Appearance Drawing