English Translation
1. Product Overview
The electron beam evaporation equipment is a typical physical vapor deposition (PVD) thin film deposition system. Its core working principle is to use high-energy electron beams to bombard evaporation materials held in crucibles. The materials rapidly sublime or evaporate under localized high temperature, travel in a straight line within a vacuum environment, and finally deposit onto the substrate surface to form high-purity thin films.
Characterized by high energy density, controllable heating zones and high material utilization efficiency, electron beam heating is especially suitable for thin film deposition of high-melting-point metals, oxides and high-purity materials. Widely applied in semiconductor devices, optical thin films, functional materials and scientific research experiments, this equipment meets the demands of laboratory research and small-batch production.
2. Functional Features
High-energy Electron Beam Heating System: Equipped with magnetically deflected or electrostatic focused electron guns to deliver stable and adjustable high-energy electron beams.
Multi-crucible Structure: Adopts multi-position crucible switching design to enable continuous evaporation of multiple materials and multi-layer films.
High Vacuum Environment: Combined with mechanical pumps and molecular pumps or cryopumps to create a clean and stable high-vacuum atmosphere.
Precise Power Control: The electron beam power is continuously adjustable for stable and controllable evaporation rate.
Film Thickness Monitoring System: Compatible with quartz crystal film thickness monitors to realize real-time control over film thickness and deposition rate.
Multi-functional Sample Stage: Supports rotation, heating and multi-sample loading to improve film thickness uniformity.
Automation & Safety Protection: Integrated with vacuum interlock, water cooling protection and fault alarm functions.
3. Application Scenarios & Fields
Semiconductors & Microelectronics: Fabrication of metal electrodes, interconnection layers and functional thin films.
Optics & Optoelectronics: Deposition of reflective films, anti-reflection coatings, metal mirrors and optical filter structures.
Advanced Materials & Fundamental Research: Preparation of high-purity metals, oxides, functional thin films and electrodes for two-dimensional materials.
MEMS & Sensors: Deposition of electrode layers and structural functional films for micro-nano devices.
Surface Engineering & Functional Coatings: Research on protective films, decorative films and various functional coatings.
IV. Technical Advantages
Wide range of applicable materialsUsing high-energy electron beams as the heating source, the equipment enables stable evaporation of high-melting-point metals (such as W, Mo, Ta, Pt), hard-to-evaporate materials and high-purity metals. The electron beam is precisely focused on the surface of evaporation materials instead of heating the entire crucible, which effectively reduces material loss and cross-contamination. It is applicable for depositing thin films of metals, alloys and certain compounds.
High film purityThe equipment operates under high vacuum with no carrier gas introduced during evaporation, greatly minimizing impurity interference. Different from traditional thermal evaporation, electron beam heating prevents secondary contamination from crucible materials. It is ideal for producing high-purity metal films and functional thin films with strict composition requirements.
Controllable deposition rateThe electron beam power can be adjusted continuously and precisely. Combined with the evaporation rate monitoring system, real-time control and feedback regulation of deposition rate are realized to adapt to various materials and process conditions. Featuring stable operation and excellent process repeatability, it supports parameter optimization for scientific research and mass production replication.
Dense and uniform thin filmsThe evaporation source delivers concentrated energy and high efficiency. Evaporated particles carry relatively high kinetic energy, contributing to dense films with strong adhesion. Equipped with rotating sample stage and multi-angle deposition design, it effectively improves film thickness uniformity over large-area substrates, meeting stringent uniformity standards for device fabrication and optical coatings.
Mature and reliable processProven by long-term scientific research and industrial applications, electron beam evaporation delivers stable processes and reliable equipment performance with low maintenance costs. Widely used in semiconductor device fabrication, electrode production, optical coatings, micro-nano machining and advanced materials research, it offers strong versatility and long service value.
V. Typical Application Cases
Table: Typical Application Cases of Electron Beam Evaporation Equipment
Case No. | Application Directions | Substrate / Material | Evaporation Material | Application Description |
Case1 | Fabrication of Metal Electrodes for Semiconductor Devices | Si / SiO₂ | Ti / Au | For metal electrode and lead layer deposition of transistors & MEMS devices; films with high purity and good adhesion. |
Case2 | Fabrication of Optical Reflective Films | Optical Glass | Al、Ag | Deposit high-reflectivity metal reflective films for mirrors and optical elements. |
Case3 | Fabrication of Contact Electrodes for 2D Material Devices | Si / SiO₂、Insulating Substrate | Cr / Au、Ti / Au | Deposit low contact resistance metal electrodes for 2D material devices. |
Case4 | Deposition of Thin-Film Encapsulation & Protective Layers | Glass / Metal Substrate | Al₂O₃、SiO₂ | For device surface protection and functional film encapsulation, improving stability and reliability. |
Note: The above configurations can be customized and adjusted according to users' experimental requirements.
VI. Technical Parameters
| Index | Specification |
|---|
| Base Pressure | ≤1×10⁻⁶ Torr (≤1×10⁻⁷ Torr with optional cryopump) |
| Beam Energy / Power | Continuously adjustable: 5–10 kV / 3–10 kW |
| Crucible Stations | 4–8 stations (Replaceable liners: Graphite / Al₂O₃ / W / Mo) |
| Deposition Rate | 0.1–10 nm/s (material dependent) |
| Substrate Size | 2–6 inch (Custom fixtures available for 8–12 inch) |
| Substrate Temperature | RT – 300 ℃ (higher temperature optional) |
| Uniformity | ≤±5% (Φ100 mm, planetary rotation; subject to materials and working conditions) |
| Thickness Control Accuracy | ≤±3% (calibrated by tooling factor & stabilized process control) |
| Gas Control | 3-channel MFC (O₂/N₂/Ar) with closed-loop pressure regulation |
Process Reference for Common Materials
| Material | Recommended Rate | Substrate Temperature | Remarks |
|---|
| Au (Gold) | 2–3 nm/s | RT–100 ℃ | Deposit 5–10 nm Ti/Cr adhesion layer first |
| Al (Aluminum) | 2–5 nm/s | RT | Pre-melt at low rate with graphite liner to prevent spattering |
| Cr (Chromium) | 0.5–1.5 nm/s | RT–80 ℃ | Commonly used as adhesion layer |
| Ti (Titanium) | 1 nm/s | ≥80 ℃ | Operate under low base pressure; post-anneal for densification |
| SiO₂ | 0.1–0.5 nm/s | 100–200 ℃ | Introduce a small amount of O₂ (10⁻⁵–10⁻⁴ Torr) |
| Al₂O₃ | 0.1–0.5 nm/s | 150–250 ℃ | Al₂O₃ liner is recommended |
2D Materials & Nano Functional Film Deposition
Micrograph of Gold Electrodes on Microchip
Product Photos
