1. Product Overview

The ABN-500-Y2 Magnetron Sputtering Coater developed by Aibona is a high-performance thin film deposition device. Adopting magnetron sputtering technology, it delivers a high deposition rate and is widely used for thin film fabrication in electronics, optics and materials science. Suitable for mass production, the equipment features excellent film uniformity and adhesion, making it ideal for applications requiring superior film quality.

2. Features

1. Efficient and stable magnetron design: Equipped with balanced or unbalanced magnetron structure to ensure uniform plasma distribution and stable, adjustable sputtering rate.

2. Multi-target configuration: Compatible with single, dual and multi-target setups for continuous deposition of multilayer films, alloy films and composite films.

3. Precise vacuum and gas control: Combined pumping system of mechanical pump and molecular pump, together with mass flow controller (MFC), ensures high vacuum cleanliness and stable atmosphere.

4. Compatibility with multiple power supplies: Configurable with DC, RF and pulsed DC (PDC) power sources to conduct conductive, non-conductive and reactive sputtering processes.

5. Versatile sample stage: Supports heating, rotation, bias and cooling functions. The sample temperature is adjustable from room temperature up to 500℃.

6. Intelligent process parameter control: Built-in PLC and touch HMI enable full automatic control over vacuum, gas flow, power output, operating time and film thickness.

7. High safety design: Integrated with water cooling protection, vacuum interlock, overcurrent & overvoltage protection and emergency stop system to guarantee safe and reliable operation.

8. Customizable and expandable: Compatible with reactive sputtering module, ion assistance module, load lock and in-situ film thickness monitoring system for advanced scientific research.

3. Application Fields

1. Semiconductor & Microelectronics ManufacturingUsed for depositing conductive layers, barrier layers, adhesion layers and metal interconnection films such as Ti/Au, Cr/Au, Al and Cu.

2. Optoelectronics & Display TechnologyApplied to prepare transparent conductive films (ITO, IZO), reflective films, light-shielding films, optical filter films and OLED electrode structures.

3. Optical Components & Precision Thin FilmsFor fabricating multilayer structures of reflective films, anti-reflective films, protective films and optical filters to meet stringent requirements of optical systems.

4. Advanced Materials & Nanotechnology ResearchSuitable for research and preparation of 2D materials, electrode films, superconducting films, functional oxides and quantum materials.

5. Energy & Sensor IndustryUsed for thin film fabrication of solar cell electrode layers, gas sensors, electrodes and energy storage devices.

6. Surface Engineering & Mechanical ManufacturingWidely used for depositing wear-resistant films, hard films and decorative films on cutting tools, molds and mechanical parts.
   

IV. Technical Advantages

1. Dense films with strong adhesion: Controllable ion energy delivers better adhesion than traditional evaporation processes.

2. Excellent film uniformity: Equipped with sample rotation and planetary rotation mechanism, film thickness uniformity is better than ±3%.

3. Wide process compatibility: Supports deposition of metallic, oxide, nitride and alloy films.

4. Low deposition temperature: Suitable for temperature-sensitive substrates such as polymers and glass.

5. Good process repeatability: Automated control system and process database ensure stable production.

6. Capable of reactive sputtering and ion-assisted deposition to optimize film structure and performance.

V. Typical Film Systems & Application Cases

Note: The above parameters are for reference only. Actual processes shall be optimized according to target purity, power, pressure and atmospheric conditions.

VI. Technical Parameters

1. Operating pressure range: (5times10^{-5} text{Pa} sim 5times10^{-3} text{Pa})

2. Gas configuration: 2 sets, 6-inch, adjustable gas injection angle

3. Operating current range: 0.1 A ~ 100 A; RF power stability ≤ 5%

4. Heating temperature: Room temperature ~ 300 °C, with backward compatibility

Equipment appearance drawing